Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs

Author

Anil, K.G. ; Mahapatra, S. ; Eisele, I.

Author_Institution

Inst. of Phys., Univ. der Bundeswehr, Munich, Germany

Volume

49

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

1283

Lastpage

1288

Abstract

Impact ionization at low drain voltages in n-MOSFETs was investigated employing devices with three different channel-doping profiles. We report an anomalous peak in substrate current (I_SUB) versus gate voltage (VG) characteristics. It is shown that the anomalous peak can not be directly related to any high field region in the device. The measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups. Strong evidence is provided which suggest that the anomalous peak in ISUB versus VC, is due to electron-electron interactions

Keywords

MOSFET; Monte Carlo methods; electron-phonon interactions; elemental semiconductors; hot carriers; impact ionisation; semiconductor device breakdown; semiconductor device models; silicon; Monte-Carlo simulation; Si; anomalous peak; channel-doping profiles; electron energy distribution; electron-electron interaction signature peak; electron-phonon interactions; hot-carrier; impact ionization; low drain voltages; n-channel MOSFET; substrate current-gate voltage characteristics; thermal tail; Charge carrier processes; Electrons; Energy measurement; Impact ionization; Low voltage; MOSFET circuits; Physics; Quantization; Silicon; Tail;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1013287

Filename

1013287