• DocumentCode
    772417
  • Title

    An analytical model for flat-band polysilicon quantization in MOS devices

  • Author

    Spinelli, Alessandro S. ; Clerc, Raphael ; Ghibaudo, Gerard

  • Volume
    49
  • Issue
    7
  • fYear
    2002
  • fDate
    7/1/2002 12:00:00 AM
  • Firstpage
    1314
  • Lastpage
    1316
  • Abstract
    A simple, physically based analytical model for carrier quantization at flat bands is presented and applied to the case of gate polysilicon quantization. Results for the reduction in the gate capacitance and threshold voltage shift are in good agreement with numerical simulations
  • Keywords
    MOSFET; capacitance; elemental semiconductors; quantisation (quantum theory); semiconductor device models; silicon; MOS devices; Si; analytical model; carrier quantization; flat-band polysilicon quantization; gate capacitance; numerical simulations; short-channel effects; threshold voltage shift; Analytical models; Capacitance; Carrier confinement; Doping; MOS devices; Numerical simulation; Physics; Quantization; Substrates; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.1013293
  • Filename
    1013293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=772417