Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition

Author

Liu, Biing-Der ; Lee, Si-Chen ; Sun, Tai-Ping ; Yang, Sheng-Jenn

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

42

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

795

Lastpage

803

Abstract

An InSb metal-oxide-semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15 and 30 μm was fabricated successfully. The SiO₂ prepared by photo-enhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common-source current-voltage characteristics show breakdown voltage exceeding 2 V indicating excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance

Keywords

III-V semiconductors; MOSFET; characteristics measurement; chemical vapour deposition; field effect transistor switches; indium compounds; leakage currents; 2 V; 5 to 30 micron; InSb-SiO₂; MOSFET; breakdown voltage; channel lengths; common-source current-voltage characteristics; gate insulator; geometry effect; p-channel metal-oxide-semiconductor field effect transistor; photo-enhanced chemical vapor deposition; pn junction reverse characteristics; source/drain passivation layer; source/drain pn junction; surface leakage current; transferred current; Capacitance-voltage characteristics; Chemical vapor deposition; Current-voltage characteristics; FETs; Geometry; Insulation; Leakage current; MOSFET circuits; Passivation; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.381972

Filename

381972