Modeling of anomalous frequency and bias dependences of effective gate resistance in RF CMOS

Author

Cui, Yan ; Niu, Guofu ; Taylor, Stewart S.

Author_Institution

Electr. & Comput. Eng. Dept., Alabama Microelectron. Sci. & Technol. Center, Auburn, AL

Volume

53

Issue

10

fYear

2006

Firstpage

2620

Lastpage

2626

Abstract

This paper explains the frequency and bias dependences of the effective gate resistance (real part of h₁₁) by considering the effect of the gate-to-body capacitance, gate-to-source/drain overlap capacitances, fringing capacitances, and nonquasi-static (NQS) effect. A new method of separating the physical gate resistance and the NQS channel resistance is proposed. Separating the gate-to-source parasitic capacitances from the gate-to-source inversion capacitance is found to be necessary for an accurate modeling of all the Y-parameters

Keywords

CMOS integrated circuits; equivalent circuits; integrated circuit modelling; radiofrequency integrated circuits; CMOS modeling; Y-parameters; anomalous frequency; bias dependences; effective gate resistance; fringing capacitances; gate-to-body capacitance; gate-to-source inversion capacitance; gate-to-source parasitic capacitances; gate-to-source-drain overlap capacitance; nonquasi-static channel resistance; nonquasi-static effect; physical gate resistance; radiofrequency CMOS; Data mining; Equivalent circuits; Frequency dependence; Frequency measurement; Intrusion detection; Parasitic capacitance; Radio frequency; Roentgenium; Semiconductor device modeling; Senior members; CMOS modeling; gate resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.882398

Filename

1705118