Estimation of maximal modulation bandwidth and group velocity dispersion in strained InGaAs quantum-well lasers

Author

Øvsthus, K. ; Khalfin, V.

Author_Institution

Telenor Res., Kjeller, Norway

Volume

143

Issue

1

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

57

Lastpage

61

Abstract

The influence of well and barrier composition on the maximal modulation bandwidth of 1.5 μm InGaAs quantum-well lasers has been investigated by calculation of both linear and nonlinear gain in the model of spectral hole burning. The barrier composition has little influence on the maximal modulation bandwidth, and structures with compressive strain in the active region have higher maximal modulation bandwidth than both the lattice matched and tensiled ones. The influence of interband transitions on group velocity dispersion is estimated and shown to be comparable to reported values of the total group velocity dispersion in multi-quantum-well structures

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical hole burning; optical modulation; quantum well lasers; 1.5 mum; InGaAs; InGaAs laser; active region; barrier composition; compressive strain; group velocity dispersion; interband transitions; lattice matched structures; linear gain; maximal modulation bandwidth; multi-quantum-well structures; nonlinear gain; spectral hole burning; strained quantum-well lasers; tensiled structures;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19960136

Filename

487676