Thick Junctions Made with Nuclear Compensated Silicon

It is known that making detectors with great depletion depth is related to the availability of high resistivity Si, generally obtained by compensation. We have experimented a new compensating technique, based on the production of P-31, in situ, by nuclear transmutation of Si by thermal neutrons. After annealing, very high resistivity Si (200 000 ¿. cm at 300° K) has been obtained by this method. NIP structures with great depletion depth obtained by nuclear compensation are described, as an example of the possibilities of this new technique.