DocumentCode
772964
Title
Intrinsic equivalent circuit of quantum-well lasers
Author
Kan, Sidney C. ; Lau, Kam Y.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
4
Issue
6
fYear
1992
fDate
6/1/1992 12:00:00 AM
Firstpage
528
Lastpage
530
Abstract
An intrinsic equivalent circuit of quantum-well lasers that takes the capture of carriers into the quantum well into account is presented. Several qualitative features in the modulation response and the device impedance are revealed. The dependences on the carrier capture and escape rates are discussed.<>
Keywords
carrier mobility; equivalent circuits; laser theory; semiconductor device models; semiconductor junction lasers; carrier capture; carrier escape rates; device impedance; intrinsic equivalent circuit; modulation response; quantum-well lasers; Carrier confinement; Charge carrier density; Equations; Equivalent circuits; Laser modes; Laser noise; Quantum capacitance; Quantum well lasers; Semiconductor lasers; Voltage;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.141956
Filename
141956
Link To Document