• DocumentCode
    772964
  • Title

    Intrinsic equivalent circuit of quantum-well lasers

  • Author

    Kan, Sidney C. ; Lau, Kam Y.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • Volume
    4
  • Issue
    6
  • fYear
    1992
  • fDate
    6/1/1992 12:00:00 AM
  • Firstpage
    528
  • Lastpage
    530
  • Abstract
    An intrinsic equivalent circuit of quantum-well lasers that takes the capture of carriers into the quantum well into account is presented. Several qualitative features in the modulation response and the device impedance are revealed. The dependences on the carrier capture and escape rates are discussed.<>
  • Keywords
    carrier mobility; equivalent circuits; laser theory; semiconductor device models; semiconductor junction lasers; carrier capture; carrier escape rates; device impedance; intrinsic equivalent circuit; modulation response; quantum-well lasers; Carrier confinement; Charge carrier density; Equations; Equivalent circuits; Laser modes; Laser noise; Quantum capacitance; Quantum well lasers; Semiconductor lasers; Voltage;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.141956
  • Filename
    141956