Low Dark Current GaN p-i-n Photodetectors With a Low-Temperature AlN Interlayer

Author

Lin, J.C. ; Su, Y.K. ; Chang, S.J. ; Lan, W.H. ; Chen, W.R. ; Huang, K.C. ; Cheng, Y.C. ; Lin, W.J.

Author_Institution

Mater. & Electro-Opt. Res. Div., Chung Shan Inst. of Sci. & Technol., Taoyuan

Volume

20

Issue

14

fYear

2008

fDate

7/15/2008 12:00:00 AM

Firstpage

1255

Lastpage

1257

Abstract

GaN p-i-n ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN interlayer were proposed and fabricated. It was found that the dark current of such detectors is as small as 28pA even at a high reverse bias of 40 V. Although the high potential barrier at the AlN-GaN interface would slightly reduce the responsivity of PD under low reverse biases, the high UV-to-visible rejection ratio of the PD with an LT-AlN interlayer could be achieved under high reverse biases due to its very low dark current. The rejection ratio of the PD with the LT-AlN interlayer is as large as 735 at the reverse bias of 40 V.

Keywords

III-V semiconductors; dark conductivity; gallium compounds; leakage currents; photodetectors; wide band gap semiconductors; GaN; III -nitride semiconductors; UV-visible rejection ratio; dark current; p-i-n ultraviolet photodetectors; potential barrier; reverse bias; voltage 40 V; Dark current; Detectors; Epitaxial layers; Fabrication; Gallium nitride; Leakage current; P-i-n diodes; PIN photodiodes; Photodetectors; Semiconductor materials; GaN; interlayer; low temperature (LT); p-i-n; photodetectors (PDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.926021

Filename

4550604