High-extinction-ratio MQW electroabsorption-modulator integrated DFB laser fabricated by in-plane bandgap energy control technique

Author

Aoki, M. ; Takahashi, M. ; Suzuki, M. ; Sano, H. ; Uomi, K. ; Kawano, T. ; Takai, A.

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

4

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

580

Lastpage

582

Abstract

The local bandgap energy of an InGaAs/InGaAsP multiple quantum well (MQW) structure was precisely adjusted by in-plane Eg control in one-step selective area metalorganic chemical vapor deposition (MOCVD) growth. The technique was then applied to an MQW electroabsorption-modulator integrated distributed feedback (DFB) laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.<>

Keywords

distributed feedback lasers; electro-optical devices; electroabsorption; integrated optoelectronics; optical modulation; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 15 mA; InGaAs-InGaAsP; MOCVD; MQW electroabsorption-modulator; device characteristics; diode lasers; high extinction ratio; in-plane Eg control; in-plane bandgap energy control technique; integrated DFB laser; local bandgap energy; low threshold current; multiple quantum well; one-step selective area metalorganic chemical vapor deposition; semiconductors; Chemical lasers; Chemical vapor deposition; Distributed feedback devices; Extinction ratio; Indium gallium arsenide; Laser feedback; MOCVD; Photonic band gap; Quantum well devices; Quantum well lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.141974

Filename

141974