InGaAsP electroabsorption modulator for high-bit-rate EDFA system

Author

Suzuki, Masatoshi ; Tanaka, Hideaki ; Matsushima, Yuichi

Author_Institution

KDD R&D Labs., Saitama, Japan

Volume

4

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

586

Lastpage

588

Abstract

The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small alpha -value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 mu m. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16000-4550-km transmission experiments at 2.5-10 Gb/s.<>

Keywords

III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; 1.2 to 2.7 V; 1.53 to 1.57 micron; 2.5 to 10 Gbit/s; 4550 to 16000 km; 8.4 to 7.8 dB; IR; InGaAsP; dynamic modulation characteristics; electroabsorption modulator; high-bit-rate EDFA system; input light; light polarisation; low driving voltage; low fiber-to-fiber insertion loss; optical modulation; packaged EA modulator; power level; semiconductors; static modulation; total performance; ultralong-distance Er-doped fiber amplifier systems; Erbium-doped fiber amplifier; Extinction ratio; Insertion loss; Optical fiber polarization; Optical films; Optical modulation; Optical polarization; Optical waveguides; Quantum well devices; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.141976

Filename

141976