Active matrix addressing operation of a dynamic optical neurochip with monolithically integrated InGaAs/GaAs MSM-FET´s

Author

Koshiba, Y. ; Ohta, J. ; Tai, S. ; Toyoda, T. ; Kyuma, K.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

Volume

4

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

617

Lastpage

620

Abstract

The active matrix addressing operation of a dynamic optical neurochip (DONC) is reported. This DONC is an integrated circuit of InGaAs metal-semiconductor-metal photodetectors (MSMPDs) and GaAs FETs. The DONC was designed so that the MSMPD has a high sensitivity but the FET has almost no optical sensitivity at 915 nm. The In/sub 0.1/Ga/sub 0.9/As/GaAs superlattice structure was used in the MSMPDs to improve the sensitivity at low bias voltage. The sensitivity of MSMPD was 0.08 A/W, two orders larger than that of the FET. As a result, the DONC was successfully operated without any critical influence on the switching characteristic of FETs.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; metal-semiconductor-metal structures; neural nets; optical information processing; photodetectors; 915 nm; DONC; GaAs FET; III-V semiconductor; InGaAs metal-semiconductor-metal photodetectors; InGaAs-GaAs; active matrix addressing operation; dynamic optical neurochip; integrated circuit; low bias voltage; monolithically integrated InGaAs/GaAs MSM-FET´s; neural network; sensitivity; superlattice structure; switching characteristic; Active matrix addressing; Electrodes; FETs; Gallium arsenide; Indium gallium arsenide; Integrated circuit technology; Integrated optics; Optical sensors; Optoelectronic devices; Photoconductivity;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.141987

Filename

141987