A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

Author

Jin, Yanyu ; Sanduleanu, Mihai A T ; Long, John R.

Author_Institution

Electron. Res. Lab./DIMES, Delft Univ. of Technol., Delft

Volume

43

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

1553

Lastpage

1562

Abstract

A millimeter-wave power amplifier fabricated in 90 nm bulk CMOS technology consists of 3 identical cascode stages and on-chip matching networks (inter-stage, input, and output) implemented with wide-gap coplanar waveguides and M6-M5 (MIM) capacitors. The amplifier realizes a linear power gain of 19.7 dB at 52.4 GHz and 10.3 dB at 60 GHz. Maximum saturated output power and output-referred compression point are and 3.1 dBm, respectively. Peak PAE is 4.2%. The 1.180.96 die consumes 75 mA when operating from a 2 V supply.

Keywords

coplanar waveguides; millimetre wave power amplifiers; wideband amplifiers; bulk CMOS technology; frequency 52.4 GHz; frequency 60 GHz; gain 10.3 dB; gain 19.7 dB; gain 20 dB; linear power gain; on-chip matching networks; size 90 nm; wide-gap coplanar waveguides; wideband millimeter-wave power amplifier; Broadband amplifiers; CMOS technology; Coplanar waveguides; Gain; Impedance matching; MIM capacitors; Millimeter wave technology; Network-on-a-chip; Power amplifiers; Power generation; 60 GHz circuits; CMOS power amplifier; millimeter-wave (mm-wave) power amplifier; power amplifier (PA); wideband;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2008.922385

Filename

4550640