Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-μm Wavelength

Author

Sato, Nobuyoshi ; Shirao, M. ; Sato, Takao ; Yukinari, Masashi ; Nishiyama, Naoto ; Amemiya, Tomohiro ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

Volume

19

Issue

4

fYear

2013

fDate

July-Aug. 2013

Firstpage

1502608

Lastpage

1502608

Abstract

We discuss the wafer design and fabrication process for the 1.3-μm-wavelength AlGaInAs/InP transistor lasers, and the structural dependence of lasing and the electrical characteristics are shown. We particularly focus on the base structure, and the thickness and width dependence are numerically and experimentally analyzed. A thicker base layer resulted in lower optical confinement factor in the quantum wells (QWs), higher optical loss, and lower current gain. In addition, a wider base width caused leak current recombination outside the QWs. By modifying the structure of an n-p-n TL, it was possible to simultaneously realize room-temperature continuous-wave lasing and transistor operation.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; leakage currents; quantum well lasers; semiconductor lasers; AlGaInAs-InP; AlGaInAs-InP buried heterostructure transistor lasers; continuous-wave lasing; current gain; leak current recombination; optical confinement factor; optical loss; quantum wells; structural dependence; thicker base layer; wavelength 1.3 mum; Doping; Indium phosphide; Lasers; Optical device fabrication; Transistors; AlGaInAs/InP; quantum-well (QW) laser; transistor laser (TL);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2250490

Filename

6472730