DocumentCode
773875
Title
Monitoring of Silicon Detector Systems with Pulsed GaAs
Author
Kuckuck, Robert W. ; Lee, J.Chong
Author_Institution
University of California Lawrence Radiation Laboratory Livermore, California
Volume
12
Issue
1
fYear
1965
Firstpage
356
Lastpage
360
Abstract
Use of the closely matching emission of GaAs and spectral response of silicon detectors is proposed as an optical method of monitoring overall nuclear detector system response. A GaAs diode is a high-speed current device which emits light with an intensity linearly related to the electrical input over a wide range and which has a frequency response well beyond that of normal silicon detectors. The speed of the GaAs source enables overall evaluation of the silicon detector and its associated circuitry. Where applicable, the optical monitoring of nuclear detector systems with compact GaAs sources offers a highly flexible alternative to isotope and electrical pulse methods. Experimental behavior of sone typical sources and detectors and the results of a procedure developed to monitor a nuclear pulse detector system are presented.
Keywords
Circuits; Detectors; Diodes; Frequency response; Gallium arsenide; High speed optical techniques; Monitoring; Optical pulses; Silicon; Stimulated emission;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1965.4323535
Filename
4323535
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