Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD

1.3- and 1.55- m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs–InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3 m) and 2.0 (for 1.55  m) mW single mode power at 25 C, 0.6 mW single mode power at 85 C and lasing operation at C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3- m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55- m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.