• DocumentCode
    774204
  • Title

    Organic light-emitting device with surface-modified tungsten-doped indium oxide anode

  • Author

    Li, G.F. ; Zhang, Q. ; Yu, F. ; Liu, C. ; Wu, H.R.

  • Author_Institution
    Dept. of Mater. Sci., Fudan Univ., Shanghai
  • Volume
    44
  • Issue
    13
  • fYear
    2008
  • Firstpage
    818
  • Lastpage
    819
  • Abstract
    The work function of tungsten-doped indium oxide (IWO) thin films could be enhanced to 5.5 eV by forming platinum and tungsten codoped indium oxide (In2O3:Pt,W) thin layers on them. With the IWO/In2O3:Pt,W double-layer as the anode, an OLED device with the structure of IWO/In2O3:Pt,W/NPB/Alq3/LiF/Al was fabricated. When the voltage is 14 V, the current density and the brightness of the device reach 1600 mA/cm2 and 2.5times104 cd/m2, respectively.
  • Keywords
    anodes; indium compounds; organic light emitting diodes; thin films; tungsten; In2O3:Pt,W; OLED; electron volt energy 5.5 eV; organic light-emitting device; platinum; surface-modified tungsten-doped indium oxide anode; thin films;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20081318
  • Filename
    4550707
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=774204