DocumentCode
774513
Title
Hole trapping, substrate currents, and breakdown in thin silicon dioxide films [ in FETs ]
Author
DiMaria, D.J.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
16
Issue
5
fYear
1995
fDate
5/1/1995 12:00:00 AM
Firstpage
184
Lastpage
186
Abstract
Using oxide-trapped-charge sensing techniques on FET\´s after high-field Fowler-Nordheim-stress, anode hole injection is shown to be important only for gate voltages larger than /spl ap/7.6 V for either p- or n-channel devices with n+ poly-Si gates independent of oxide thickness. These results do not support popular models for thin oxide degradation and "intrinsic" breakdown based on hole trapping in the oxide layer at lower voltages.<>
Keywords
MOSFET; electric breakdown; hole traps; insulating thin films; silicon compounds; FETs; SiO/sub 2/; anode hole injection; breakdown; gate voltages; high-field Fowler-Nordheim-stress; hole trapping; n-channel devices; oxide-trapped-charge sensing techniques; p-channel devices; polysilicon gates; substrate currents; Anodes; Breakdown voltage; Capacitance-voltage characteristics; Cathodes; Electric breakdown; Electron traps; FETs; Semiconductor films; Silicon compounds; Stress;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.382234
Filename
382234
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