Application of a CMOS current mode approach to on-chip current sensing in smart power circuits

Author

Givelin, Ph ; Bafleur, M. ; Tournier, E. ; Laopoulos, Th ; Siskos, S.

Author_Institution

Lab. d´´Autom. et d´´Archit. des Syst., CNRS, Toulouse, France

Volume

142

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

357

Lastpage

363

Abstract

A novel accurate CMOS current sensing circuit for the protection of smart power MOS switches, using the current mode approach is proposed. It has the advantage of not requiring any passive components and it is based on a CMOS current mode building block presenting a wide frequency bandwidth as well as temperature insensitivity. Two current sensing cells are necessary to detect open load, short-circuit and overcurrent situations. Detection is achieved by monitoring a small portion of the power switch current provided by a single-cell transistor (SENSEFET). The performance of these functions is analysed by electrical PSPICE simulations and experimental results obtained from a silicon test chip

Keywords

CMOS analogue integrated circuits; MOSFET; SPICE; circuit analysis computing; digital simulation; power integrated circuits; CMOS current mode approach; MOS switches; PSPICE simulations; SENSEFET; frequency bandwidth; on-chip current sensing; open load; overcurrent situations; short-circuit situations; single-cell transistor; smart power circuits; temperature insensitivity; test chip;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19952086

Filename

487944