Oxidation control of GaAs pHEMTs for high efficiency applications

Author

Zheng, Can ; Coffie, R. ; Buttari, D. ; Champlain, J. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

23

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

380

Lastpage

382

Abstract

In this letter, for the first time, an investigation of partially oxidized GaAs-on-insulator (GOI) AlGaAs/InGaAs/GaAs pseudomorphic HEMTs is reported. Fully oxidized pHEMTs demonstrated minimized substrate leakage current and high output impedance, but suffered from 30/spl sim/40% charge loss. Fully oxidized devices also showed transconductance peaking that could be removed by controlled partial oxidation. Partially oxidized pHEMT devices showed improved power added efficiencies (PAEs) at a low supply voltage of 3.0 V compared to fully oxidized or unoxidized devices and negligible charge loss (<10%).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; leakage currents; oxidation; 3.0 V; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs; GaAs-on-insulator; charge loss; controlled partial oxidation; impact ionization; output impedance; pHEMTs; power added efficiencies; substrate leakage current; supply voltage; transconductance peaking; Electrons; Etching; Gallium arsenide; Indium gallium arsenide; MESFETs; Millimeter wave technology; Oxidation; PHEMTs; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1015203

Filename

1015203