Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs

Author

Mazzanti, A. ; Verzellesi, G. ; Canali, Claudio ; Meneghesso, G. ; Zanoni, Enrico

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Universita di Modena e Reggio Emilia, Italy

Volume

23

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

383

Lastpage

385

Abstract

The physical origin of the kink and its dynamics are investigated in AlGaAs/GaAs doped-channel heterostructure field-effect transistors (HFETs) both through measurements and two-dimensional (2D) device simulations. The kink is shown to arise from the interaction of surface deep acceptors with impact-ionization-generated holes, the latter partially discharging the deep levels and therefore leading to conductive-channel widening and to drain-current increase. Under pulsed operation, kink dynamics is governed by hole emission and capture phenomena, prevailing at low and high drain-source voltages, respectively.

Keywords

III-V semiconductors; aluminium compounds; deep levels; field effect transistors; gallium arsenide; impact ionisation; semiconductor device measurement; semiconductor device models; AlGaAs-GaAs; AlGaAs/GaAs; HFETs; capture phenomena; conductive-channel widening; deep levels; doped-channel heterostructure field effect transistors; drain-current increase; drain-source voltages; hole emission; impact-ionization-generated holes; kink dynamics; surface deep acceptors; two-dimensional device simulations; Gallium arsenide; HEMTs; Irrigation; MODFETs; Numerical simulation; Pulse measurements; Surface discharges; Time measurement; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1015205

Filename

1015205