High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum

We demonstrate for the first time a high-power P-i-N diode with local lifetime control using the proximity gettering of platinum in the FZ silicon. The region of maximal damage resulting from the low-dose helium implantation was decorated by substitutional platinum that diffused from the PtSi anode contact at low temperature (700/spl deg/C) through the P/sup +/-P anode doping at the distance of 70 μm. The diodes show very low forward voltage drop with negative temperature coefficient and very low leakage current even at elevated temperatures while keeping the major advantages of the ion irradiated devices like low turn-off losses and soft recovery.