A 1-W high-efficiency Q-band MMIC power amplifier

Author

Chi, J.C.L. ; Lester, J.A. ; Hwang, Y. ; Chow, P.D. ; Huang, M.Y.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

5

Issue

1

fYear

1995

Firstpage

21

Lastpage

23

Abstract

Recent development on MMIC power amplifier has pushed the power-added efficiency (PAE) of 1-W amplifier to 29.4%. The power amplifier, using 0.15-μm InGaAs T-gate PHEMT devices, can deliver 1.2 W with 25% efficiency at 40 GHz when the drain is biased at 5 V. When the drain voltage drops to 4 V the output power is 1 W with 9-db associated gain and 29.4% PAE. The measured linear gain is averaged to be 12.5 db from 38-44 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; power amplifiers; power integrated circuits; 0.15 micron; 1 to 1.2 W; 29.4 to 25 percent; 38 to 44 GHz; 4 to 5 V; 9 to 12.5 dB; EHF; InGaAs; MIMIC; MM-wave IC; MMIC power amplifier; Q-band; T-gate PHEMT devices; high-efficiency operation; Gain measurement; HEMTs; High power amplifiers; Indium gallium arsenide; MMICs; Power amplifiers; Power generation; Power measurement; Power system modeling; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.382372

Filename

382372