Title :
Surface potential measurements of vacuum ultraviolet irradiated Al2O3, Si3N4, and SiO2
Author :
Lauer, J.L. ; Shohet, J.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI, USA
fDate :
4/1/2005 12:00:00 AM
Abstract :
Vacuum ultraviolet radiation (VUV), generated during plasma processing of semiconductors devices can induce charge on dielectric materials. By exposing dielectric coated wafers to synchrotron radiation of varying energy, it is possible to separate the photoemission and photoconductive effects, both of which result in an increase in the surface potential of the dielectric. Maps of the surface potential induced on the dielectrics by VUV can be obtained by the use of a Kelvin probe.
Keywords :
alumina; dielectric thin films; photoconductivity; photoemission; plasma materials processing; silicon compounds; surface potential; ultraviolet radiation effects; Al2O3; Kelvin probe; Si3N4; SiO2; dielectric coated wafers; dielectric materials; photoconduction; photoemission; plasma processing; semiconductor devices; surface potential; synchrotron radiation; vacuum ultraviolet irradiation; Dielectric materials; Dielectric measurements; Kelvin; Photoconductivity; Photoelectricity; Plasma devices; Plasma materials processing; Plasma measurements; Semiconductor devices; Synchrotron radiation; Plasma damage; plasma radiation; vacuum ultraviolet radiation (VUV);
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2005.845307
