Active Charge/Discharge IGBT Modulator for Marx Generator and Plasma Applications

Author

Steenkamp, Casper J T ; Bradley, Michael P.

Author_Institution

Phys. & Eng. Phys. Dept., Saskatchewan Univ., Saskatoon, Sask.

Volume

35

Issue

2

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

473

Lastpage

478

Abstract

In this paper, we present a Marx-stackable insulated-gate-bipolar-transistors-based modulator for plasma ion implantation and other pulsed high voltage-high peak power applications. Active control of charging and discharging cycles permits rigid pulse forms, arbitrary duty cycles and internal efficiencies exceeding 90%. We demonstrate a 20-kV 15-A generator using a 2-kV Marx generator to drive a pulse transformer

Keywords

modulators; pulse generators; pulse transformers; pulsed power supplies; 15 A; 2 kV; 20 kV; IGBT modulator; Marx generator; duty cycles; insulated gate bipolar transistors; internal efficiencies; plasma ion implantation; pulse transformer; pulsed high voltage high peak power applications; Capacitors; Insulated gate bipolar transistors; Ion implantation; Optical pulse generation; Plasma applications; Plasma immersion ion implantation; Power generation; Pulse modulation; Pulse transformers; Switches; Capacitor bank; Marx generator; plasma ion implantation (PII); power modulation; pulsed power;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2007.892739

Filename

4154905