Highly Polarized Single-Chip ELED Sources Using Oppositely Strained MQW Emitters and Absorbers

Author

Nicholes, Steven C. ; Raring, James W. ; Norberg, Erik J. ; Wang, Chad S. ; Dummer, Matthew M. ; DenBaars, Steven P. ; Coldren, Larry A.

Author_Institution

Dept. of Mater., Univ. of California Santa Barbara, Santa Barbara, CA

Volume

20

Issue

14

fYear

2008

fDate

7/15/2008 12:00:00 AM

Firstpage

1267

Lastpage

1269

Abstract

Integrated polarizer components with polarization extinctions 40 dB are desirable for state-of-the-art photonic integrated circuits. We demonstrate 60-dB polarization extinction from a single-chip InGaAsP-InP broadband source by combining an edge light-emitting diode consisting of compressively strained quantum wells (QWs) with an absorber consisting of tensile strained QWs. A 600-m polarizer exhibits only 5 dB of insertion loss.

Keywords

gallium arsenide; indium compounds; integrated optics; light emitting diodes; optical losses; optical polarisers; quantum well devices; InGaAsP-InP; InGaAsP-InP broadband source; MQW emitters; absorbers; compressively strained quantum wells; edge light-emitting diode; insertion loss; integrated polarizer; loss 5 dB; photonic integrated circuits; polarization extinctions; single-chip ELED sources; Capacitive sensors; Light emitting diodes; Optical polarization; Optical sensors; Optical waveguides; Photonic integrated circuits; Quantum well devices; Stimulated emission; Tellurium; Tensile strain; Edge light-emitting diode (ELED); photonic integrated circuits (PICs); polarization; strained quantum well (QW);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.926545

Filename

4553770