DocumentCode
776381
Title
Enhancement of hot-carrier-induced degradation in ultra-thin gate oxide pMOSFETs stressed under high gate voltage
Author
Chen, J.F. ; Tsao, C.-P. ; Ong, T.C.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
38
Issue
13
fYear
2002
fDate
6/20/2002 12:00:00 AM
Firstpage
658
Lastpage
660
Abstract
Enhanced hot-carrier-induced drain current degradation is observed in ultra-thin gate oxide pMOSFETs stressed under high gate voltage. Electron tunnelling from the gate plus an Auger-recombination-assisted hot hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide or devices stressed under lower drain voltage
Keywords
Auger effect; MOSFET; electron-hole recombination; hot carriers; semiconductor device reliability; tunnelling; Auger-recombination assisted process; drain current degradation; electron tunnelling; gate voltage; hot hole energy gain; hot-carrier-induced degradation; ultra-thin gate oxide pMOSFETs;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020450
Filename
1015744
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