• DocumentCode
    776535
  • Title

    Nondestructive void size determination in copper metallization under passivation

  • Author

    Gan, Zhenghao ; Tan, Cher Ming ; Zhang, Guan

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • Volume
    3
  • Issue
    3
  • fYear
    2003
  • Firstpage
    69
  • Lastpage
    78
  • Abstract
    A novel nondestructive failure analysis technique to rapidly locate tiny voids in narrow metallization line covered with passivation is proposed, based on the simulation results. In this technique, the current alteration in a metal line under study is recorded continuously when it is subjected to electron beam scanning and biased by a small external voltage. Finite-element analysis is performed to simulate the temperature distribution and current alteration in the metal line. The electron-beam heating is demonstrated as the most important factor contributing to the current alteration. Reconstruction of voids with any shape (such as wedge or slit) is possible on the basis of the gradient of the current alteration. It is found that the minimum detectable void size can be as low as 50 nm. Experimental verification of the technique is underway.
  • Keywords
    ULSI; copper; electromigration; electron beam testing; failure analysis; finite element analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; nondestructive testing; passivation; voids (solid); Cu; Cu metallization; current alteration gradient; deep-submicron metal lines; electron beam scanning; electron-beam heating; finite-element analysis; narrow metallization line; nondestructive failure analysis technique; nondestructive void size determination; passivation; temperature distribution; Analytical models; Copper; Electron beams; Failure analysis; Finite element methods; Metallization; Passivation; Performance analysis; Temperature distribution; Voltage;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2003.815285
  • Filename
    1229714