Title :
Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation
Author :
Ralston, J.D. ; Laughton, F.R. ; Chazan, P. ; Larkins, E.C. ; Maier, M. ; Abd Rahman, M.K. ; White, I.H.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
4/13/1995 12:00:00 AM
Abstract :
Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structure containing undoped active regions
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor doping; InGaAs-GaAs; active region; filamentation; linewidth enhancement factor; modulation-doping; numerical beam propagation simulations; p-doping; tapered MQW lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950451
