DocumentCode
776751
Title
Recessed-gate InGaAs MESFETs with an AlAs etch-stop layer
Author
Liao, M.P. ; East, J.R. ; Haddad, G.I.
Author_Institution
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
Volume
31
Issue
8
fYear
1995
fDate
4/13/1995 12:00:00 AM
Firstpage
684
Lastpage
685
Abstract
The authors have fabricated InGaAs MESFETs with a double selective gate recess process using a thin AlAs layer. Very low gate leakage is obtained since the gates are not in contact with the mesa sidewall. 1 μm×100 μm InGaAs MESFETs exhibit a transconductance, fT and fmax of 215 mS/mm, 24 GHz, and 70 GHz, respectively
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; semiconductor technology; 1 micron; 24 GHz; 70 GHz; InGaAs-AlAs; double selective gate recess process; etch-stop layer; gate leakage; recessed-gate MESFETs; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950415
Filename
384030
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