• DocumentCode
    776784
  • Title

    Effects of anneal temperature on the electrical characteristics of nickel-based ohmic contacts to β-SiC

  • Author

    Arugu, D.O. ; Harris, G.L. ; Taylor, C.

  • Volume
    31
  • Issue
    8
  • fYear
    1995
  • fDate
    4/13/1995 12:00:00 AM
  • Firstpage
    678
  • Lastpage
    680
  • Abstract
    A study is presented of the effects of anneal temperature on the electrical characteristics of nickel-based ohmic contacts to β-SiC. Patterned metal structures on SiC films were annealed at temperatures ranging from 400 to 1200°C, and electrically probed. The lowest contact resistance was 1.41×10-4 Ωcm2 at 1000°C
  • Keywords
    annealing; contact resistance; nickel; ohmic contacts; semiconductor materials; semiconductor-metal boundaries; silicon compounds; β-SiC; 400 to 1200 C; Au-Ni-SiC; Mo-Ni-SiC; Ni-based ohmic contacts; anneal temperature; contact resistance; electrical characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950450
  • Filename
    384033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=776784