High-transconductance p-type SiGe modulation-doped field-effect transistor

Author

Arafa, M. ; Ismail, K. ; Fay, P. ; Chu, J.O. ; Meyerson, B.S. ; Adesida, I.

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

Volume

31

Issue

8

fYear

1995

fDate

4/13/1995 12:00:00 AM

Firstpage

680

Lastpage

681

Abstract

High-transconductance 1.5 μm-gate-length p-type modulation-doped field-effect transistors (MODFETs) have been fabricated using standard optical lithography on a high hole-mobility SiGe heterostructure grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). A maximum DC extrinsic (intrinsic) transconductance of 95 mS/mm (138 mS/mm) at room temperature has been achieved, which to our knowledge is the highest for p-type field-effect transistors at this gate length. A unity current-gain frequency f_t of 2.1 GHz has been measured. The gate leakage current was quite low and was of the order of a few μA/mm. These enhancement-mode devices exhibit reasonable pinch-off characteristics

Keywords

Ge-Si alloys; UHF field effect transistors; high electron mobility transistors; hole mobility; leakage currents; semiconductor materials; vapour phase epitaxial growth; 1.5 micron; 138 mS/mm; 2.1 GHz; 95 mS/mm; DC extrinsic transconductance; DC intrinsic transconductance; HEMT; MODFET; SiGe; SiGe heterostructure; UHF operation; UHV CVD; chemical vapour deposition; enhancement-mode devices; field-effect transistor; gate leakage current; high-transconductance; modulation-doped FET; optical lithography; p-type FET; pinchoff characteristics; ultrahigh vacuum CVD;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950453

Filename

384034