DocumentCode :
777071
Title :
Visible and near-ultraviolet emission Characteristics of Ne, Ar, and Ar/N2 excited in silicon microcavity discharge arrays
Author :
Ostrom, Nels P. ; Eden, J. Gary
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Volume :
33
Issue :
2
fYear :
2005
fDate :
4/1/2005 12:00:00 AM
Firstpage :
578
Lastpage :
579
Abstract :
Atomic and molecular emissions provide a convenient diagnostic of the spatial uniformity of the electrical characteristics of Si microcavity discharge arrays. 10×10 arrays of (50 μm)2, inverted pyramidal Si microcavity pixels have been studied with Ne, Ar, and Ar/N2 gas mixtures at pressures up to 800 torr. Nonuniform power loading of pixels in the array, as well as the comparative strength of the electric field within each pixel at the device perimeter, are evident from images of the surface emission from the array.
Keywords :
argon; discharges (electric); neon; nitrogen; plasma diagnostics; plasma pressure; plasma transport processes; 50 mum; Ar-N2; Ne; atomic emission; electrical characteristics; molecular emission; near-ultraviolet emission characteristics; nonuniform power loading; silicon microcavity discharge arrays; spatial uniformity diagnostics; surface emission; visible emission characteristics; Argon; Conductivity; Dielectric substrates; Microcavities; Optical arrays; Pixel; Plasma confinement; Plasma devices; Silicon; Stimulated emission; Arrays; atomic and molecular emission; microdischarges; plasmas;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2005.845272
Filename :
1420585
Link To Document :
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