• DocumentCode
    777315
  • Title

    Spectroscopic study of red light emission in porous silicon

  • Author

    Prokes, S.M.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    1
  • Issue
    4
  • fYear
    1995
  • fDate
    12/1/1995 12:00:00 AM
  • Firstpage
    1140
  • Lastpage
    1144
  • Abstract
    Since bulk silicon does not emit light in the visible part of the spectrum, the discovery of visible luminescence from porous silicon has been quite surprising and has generated significant interest. This material differs from bulk silicon in one important way, in that it consists of interconnected silicon nanostructures, having very large surface to volume ratios. The first emission mechanism proposed involved carrier recombination within quantum size silicon particles, but more recent work has shown that surface emission models may be more likely. The problems with the quantum confinement model will be discussed in view of current data, and an oxygen center luminescence model will be discussed, with supporting experimental data. A direct correlation between the presence of these centers and the red photoluminescence in both as-made and oxidized PSi will be presented
  • Keywords
    elemental semiconductors; oxidation; particle size; photoluminescence; porous materials; silicon; surface phenomena; Si; carrier recombination; interconnected silicon nanostructures; oxidized PSi; oxygen center luminescence model; porous Si; quantum confinement model; quantum size silicon particles; red light emission; surface emission models; very large surface to volume ratios; visible luminescence; Luminescence; Nanostructured materials; Phonons; Photoluminescence; Potential well; Radiative recombination; Satellites; Semiconductor materials; Silicon; Spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/2944.488692
  • Filename
    488692