DocumentCode
777315
Title
Spectroscopic study of red light emission in porous silicon
Author
Prokes, S.M.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
1
Issue
4
fYear
1995
fDate
12/1/1995 12:00:00 AM
Firstpage
1140
Lastpage
1144
Abstract
Since bulk silicon does not emit light in the visible part of the spectrum, the discovery of visible luminescence from porous silicon has been quite surprising and has generated significant interest. This material differs from bulk silicon in one important way, in that it consists of interconnected silicon nanostructures, having very large surface to volume ratios. The first emission mechanism proposed involved carrier recombination within quantum size silicon particles, but more recent work has shown that surface emission models may be more likely. The problems with the quantum confinement model will be discussed in view of current data, and an oxygen center luminescence model will be discussed, with supporting experimental data. A direct correlation between the presence of these centers and the red photoluminescence in both as-made and oxidized PSi will be presented
Keywords
elemental semiconductors; oxidation; particle size; photoluminescence; porous materials; silicon; surface phenomena; Si; carrier recombination; interconnected silicon nanostructures; oxidized PSi; oxygen center luminescence model; porous Si; quantum confinement model; quantum size silicon particles; red light emission; surface emission models; very large surface to volume ratios; visible luminescence; Luminescence; Nanostructured materials; Phonons; Photoluminescence; Potential well; Radiative recombination; Satellites; Semiconductor materials; Silicon; Spectroscopy;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.488692
Filename
488692
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