Pseudomorphic 2DEG FET IC´s for 10 Gb/s optical communication systems with external optical modulation

Author

Suzuki, Yasuyuki ; Suzaki, Tetsuyuki ; Ogawa, Yumi ; Fujita, Sadao ; Liu, Wendy ; Okamoto, Akihiko

Author_Institution

NEC Corp., Ibaraki, Japan

Volume

27

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1342

Lastpage

1346

Abstract

An optical modulator driver IC and a preamplifier IC for 10 Gb/s optical communication systems are developed using AlGaAs/InGaAs/GaAs pseudomorphic two-dimensional electron gas (2DEG) FETs with a gate length of 0.35 μm. The optical modulator driver IC operates at a data rate up to 10 Gb/s with an output voltage swing of more than 4 V_p-p. The bandwidth for the amplifier IC is 13.0 GHZ with ab 47 dB-Ω transimpedance gain. In addition, optical transmission experiments with external optical modulation using these ICs have successfully been carried out at 10 Gb/s

Keywords

III-V semiconductors; aluminium compounds; driver circuits; field effect integrated circuits; gallium arsenide; indium compounds; optical communication equipment; optical modulation; preamplifiers; 0.35 micron; 10 Gbit/s; 13 GHz; AlGaAs-InGaAs-GaAs; bandwidth; data rate; external optical modulation; gate length; optical communication systems; optical modulator driver IC; optical transmission; output voltage swing; preamplifier IC; pseudomorphic 2DEG FET IC; transimpedance gain; Driver circuits; Electron optics; FET integrated circuits; Gallium arsenide; Indium gallium arsenide; Optical fiber communication; Optical modulation; Photonic integrated circuits; Preamplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.156435

Filename

156435