Title :
Measured negative differential resistivity for GaN Gunn diodes on GaN substrate
Author :
Yilmazoglu, O. ; Mutamba, K. ; Pavlidis, D. ; Karaduman, T.
Author_Institution :
Dept. of High Frequency Electron., Tech. Univ. Darmstadt
Abstract :
Current-voltage characteristics obtained by pulse-biasing GaN Gunn diodes on GaN substrate showed a wide negative differential resistance (NDR) region. Electrical fields of up to twice the threshold value did not lead to any electromigration effects from the contacts. The electron drift-velocity (vD) was estimated to be 1.9times107 cm/s. This represents the first demonstration of a stable NDR with a vertical GaN-based Gunn device
Keywords :
Gunn diodes; III-V semiconductors; gallium compounds; substrates; GaN-GaN; Gunn diodes; current-voltage characteristics; negative differential resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070658
