Deposition parameter studies and surface acoustic wave characterization of PECVD silicon nitride films on lithium niobate

Author

Hines, Jacqueline H. ; Malocha, Donald C. ; Sundaram, Kalpathy B. ; Casey, Kevin J. ; Lee, Kwang R.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

Volume

42

Issue

3

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

397

Lastpage

403

Abstract

Silicon nitride films were deposited by a plasma enhanced chemical vapor deposition technique using silane-ammonia as the reactant gas mixture. The influence of the process parameters such as flow ratio of the reactant gases, pressure, substrate temperature, RF power, time of deposition and electrode spacing on the deposition and etch rates were investigated. From the matrix of deposition conditions, the deposition parameters for high quality films applicable to surface acoustic wave (SAW) technology were found. Experimental results on the acoustic loss, reflectivity and velocity dispersion for the fabricated devices are presented.<>

Keywords

acoustic materials; dielectric thin films; lithium compounds; plasma CVD coatings; silicon compounds; surface acoustic waves; LiNbO/sub 3/; PECVD silicon nitride films; Si/sub 3/N/sub 4/; acoustic loss; acoustic reflectivity; acoustic velocity dispersion; etch rates; lithium niobate; plasma enhanced chemical vapor deposition; reactant gas mixture; silane-ammonia; surface acoustic waves; Acoustic waves; Chemical vapor deposition; Gases; Plasma applications; Plasma chemistry; Plasma temperature; Plasma waves; Semiconductor films; Silicon; Surface acoustic waves;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.384449

Filename

384449