Title :
MMIC family for DBS down-converter with pulse-doped GaAs MESFETs
Author :
Shiga, Nobuo ; Sekiguchi, Takeshi ; Nakajima, Shigeru ; Otobe, Kenji ; Kuwata, Nobuhiro ; Matsuzaki, Ken-Ichiro ; Hayashi, Hideki
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fDate :
10/1/1992 12:00:00 AM
Abstract :
A monolithic microwave integrated circuit (MMIC) family was demonstrated as a low-noise block (LNB) downconverter for use in direct broadcast satellite (DBS) receivers operating from 11.7 to 12 GHz. A 12-GHz low-noise amplifier (LNA), a 12-GHz mixer (MIX), a 10.7-GHz dielectric resonator oscillator (DRO), and a 1-GHz IF amplifier (IFA) were designed with GaAs MMIC technology. These MMIC chips were designed to form a complete LNB downconverter function with the exception of the dielectric resonator. The most significant result of this work is that practical low-noise performance can be achieved without the use of high-electron-mobility transistors (HEMTs) in a preceding stage of the MMIC LNB downconverter. Almost noise-free satellite broadcast TV pictures were seen by using a parabolic antenna, 40 cm in diameter, without needing any additional circuit adjustment
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; direct broadcasting by satellite; field effect integrated circuits; frequency convertors; gallium arsenide; intermediate-frequency amplifiers; microwave amplifiers; microwave oscillators; mixers (circuits); satellite ground stations; 11.7 to 12 GHz; DBS down-converter; DRO; GaAs; IF amplifier; LNA; LNB; SHF; dielectric resonator oscillator; direct broadcast satellite; downconverter; low-noise amplifier; low-noise block; mixer; monolithic microwave integrated circuit; pulse doped device; satellite receivers; Dielectrics; Gallium arsenide; HEMTs; Low-noise amplifiers; MESFETs; MMICs; MODFETs; Microwave integrated circuits; Pulse amplifiers; Satellite broadcasting;
Journal_Title :
Solid-State Circuits, IEEE Journal of
