Logic circuits using resonant-tunneling hot-electron transistors (RHETs)

Author

Takatsu, M. ; Imamura, K. ; Ohnishi, H. ; Mori, T. ; Adachihara, T. ; Muto, S. ; Yokoyama, N.

Author_Institution

Fujitsu Ltd., Atsugi, Japan

Volume

27

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1428

Lastpage

1430

Abstract

A full adder and a 1/2 frequency divider using resonant-tunneling hot-electron transistors (RHETs) are proposed. These circuits make the best use of negative differential conductance, a feature of RHETs, and contain much fewer transistors than used in conventional circuits. They were fabricated using self-aligned InGaAs RHETs and WSiN thin film resistors on a single chip. The RHETs have an i-InGaAlAs/i-InGaAs collector barrier that improves the current gain at low collector-based voltages. Circuit operation was confirmed at 77 K with a supply voltage of 3 V

Keywords

III-V semiconductors; adders; bipolar integrated circuits; frequency dividers; gallium arsenide; hot electron transistors; indium compounds; integrated logic circuits; resonant tunnelling devices; 1/2 frequency divider; 3 V; 77 K; HET; InGaAlAs-InGaAs; WSiN thin film resistors; full adder; hot-electron transistors; logic circuits; negative differential conductance; resonant-tunneling; self-aligned InGaAs RHETs; Adders; Frequency conversion; Latches; Logic circuits; Logic devices; Logic gates; Research and development; Resistors; Resonant tunneling devices; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.156447

Filename

156447