Single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum-well laser

Author

Morris, N.A. ; Connolly, J.C. ; Martinelli, R.U. ; Abeles, J.H. ; Cook, A.L.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

Volume

7

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

455

Lastpage

457

Abstract

We have developed single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum well lasers as sources for O₂ sensing through laser absorption spectroscopy. Devices containing a 4-μm-wide ridge waveguide exhibit low threshold currents of 25 mA and quantum efficiencies greater than 35% at output powers in excess of 25 mW. The spectral linewidths of these devices are 12.0 MHz at 15 mW. Temperature- and current-tuning rates are 0.06 nm//spl deg/C and 0.0075 nm/mA (-3.9 GHz/mA), respectively. The devices display smooth, continuous, single-mode wavelength tuning over a 4.2 nm interval.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gas sensors; laser modes; laser tuning; measurement by laser beam; quantum well lasers; ridge waveguides; spectral line breadth; waveguide lasers; 15 mW; 25 mA; 25 mW; 35 percent; 4 mum; 761 nm; GaAs-AlGaAs; O/sub 2/; O/sub 2/ sensing; current-tuning rates; laser absorption spectroscop; low threshold currents; output powers; quantum efficiencies; ridge waveguide; single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum-well laser; smooth continuous single-mode wavelength tuning; spectral linewidths; temperature-tuning rates; Distributed feedback devices; Gas lasers; Holographic optical components; Laser tuning; Optical interferometry; Quantum well lasers; Spectroscopy; Surface emitting lasers; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.384508

Filename

384508