Title :
High-sensitivity InP/InGaAs DHBT decision circuit-design and application in optical and system experiments at 40-43 Gbit/s
Author :
Konczykowska, Agnieszka ; Jorge, Filipe ; Idler, Wilfried ; Godin, Jean
Author_Institution :
OPTO+, ALCATEL Res. & Innovation, Marcoussis, France
fDate :
4/1/2005 12:00:00 AM
Abstract :
A high-input-sensitivity decision D flip-flop integrated circuit was designed and fabricated in a self-aligned InP double heterojunction bipolar transistor technology (Ft=180 GHz, Fmax=220 GHz). Circuit measurements at 40 Gbit/s show excellent eye quality, 15-mV sensitivity, and good clock phase margin. Two optical experiments, i.e., assessment of decision circuit reamplifying, reshaping, and retiming capabilities in 40-Gbit/s nonreturn-to-zero (full rate) photoreceiver and 43-Gbit/s optical signal noise ratio measurement (21.8 dB/0.1 nm for 10-9 BER) are also presented.
Keywords :
flip-flops; heterojunction bipolar transistors; integrated circuit design; 15 mV; 180 GHz; 220 GHz; 40 to 43 Gbit/s; InP-InGaAs; bipolar integrated circuits; circuit design; circuit measurements; clock phase margin; decision circuit reamplifying; double heterojunction bipolar transistor technology; electrical time-division multiplex; eye quality; indium compounds; optical experiments; optical signal noise ratio measurement; photoreceiver; sensitivity; Bipolar integrated circuits; DH-HEMTs; Double heterojunction bipolar transistors; Flip-flops; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Optical noise; Optical sensors; Phase measurement; Bipolar integrated circuits (ICs); decision circuit; electrical time-division multiplex (ETDM); flip-flops; indium compounds; photoreceiver; very high-speed ICs;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2005.845712
