Title :
Very large bandwidth strained MQW DFB laser at 1.3 μm
Author :
Chen, Tiffani R. ; Ungar, J. ; Yeh, X.L. ; Bar-Chaim, N.
Author_Institution :
Ortel Corp., Alhambra, CA, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
A 3-dB bandwidth of 20 GHz has been demonstrated for a compressively strained multiquantum well InGaAsP-InP DPB laser operating at 1.3 μm. The laser displayed superior static performance including very low threshold current (/spl sim/8 mA), high external quantum efficiency (0.44 mW/mA), high CW output power (>60 mW) and high temperature operation.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 1.3 mum; 20 GHz; 60 mW; 8 mA; InGaAsP-InP; InGaAsP-InP DPB laser; compressively strained multiquantum well laser; high CW output power; high external quantum efficiency; high temperature operation; static performance; strained MQW DFB laser; very large bandwidth; very low threshold current; Bandwidth; Chemical lasers; Laser modes; Masers; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
