700 Mb/s monolithically integrated four-channel receiver array OEIC using ion-implanted InGaAs JFET technology

Author

Römer, D. ; Lauterbach, Ch ; Hoffmann, L. ; Walter, J.W. ; Huber, H. ; Ebbinghaus, G.

Author_Institution

Res. Labs., Siemens AG, Munich, Germany

Volume

7

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

543

Lastpage

545

Abstract

A four-channel receiver array suitable for wavelength division multiplexing and parallel optical interconnects has been fabricated. This is achieved by planar monolithic integration of ion implanted junction field-effect transistors, p-i-n photodiodes and level shift diodes in the InGaAs-InP material system. At a data rate of 700 Mb/s the receiver sensitivity is -32 dBm with a high homogeneity over all channels. The crosstalk attenuation is better than 36 dB.<>

Keywords

digital communication; integrated optoelectronics; ion implantation; junction gate field effect transistors; optical crosstalk; optical interconnections; optical receivers; p-i-n photodiodes; wavelength division multiplexing; 700 Mbit/s; InGaAs-InP; OEIC; PIN photo diodes; WDM; crosstalk attenuation; four-channel receiver array; ion-implanted JFET technology; junction field-effect transistors; level shift diodes; monolithically integrated receiver array; parallel optical interconnects; planar monolithic integration; wavelength division multiplexing; FETs; Monolithic integrated circuits; Optical arrays; Optical interconnections; Optical materials; Optical receivers; Optoelectronic devices; P-i-n diodes; PIN photodiodes; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.384538

Filename

384538