Single transverse mode 850nm GaAs/AlGaAs lasers with narrow beam divergence

Author

Kettler, T. ; Posilovic, K. ; Schulz, O. ; Karachinsky, L.Ya. ; Novikov, I.I. ; Shernyakov, Yu.M. ; Kuznetsov, S.M. ; Gordeev, N.Yu. ; Maximov, M.V. ; Ben-Ami, U. ; Sharon, A. ; Mikhrin, S.S. ; Kovsh, A.R. ; Shchukin, Vitaly A. ; Kop´ev, P.S. ; Ledentsov,

Author_Institution

Center for NanoPhotonics, Tech. Univ. Berlin

Volume

42

Issue

20

fYear

2006

fDate

9/28/2006 12:00:00 AM

Firstpage

1157

Lastpage

1158

Abstract

GaAs/AlGaAs 850 nm range lasers based on a longitudinal photonic bandgap crystal waveguide show narrow vertical far-field pattern. Vertical and lateral beam divergence with FWHM below 10deg and 5deg, respectively, is demonstrated for 4 mum stripe width, being independent on injection current. Excellent beam quality with M²=1.4, low internal losses of 1.4 cm^-1 and high differential quantum efficiency of 83% are observed

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser modes; photonic band gap; semiconductor lasers; 83 percent; 850 nm; FWHM; GaAs-AlGaAs; differential quantum efficiency; injection current; lateral beam divergence; longitudinal photonic bandgap crystal waveguide; narrow beam divergence; semiconductor lasers; single transverse mode lasers; vertical beam divergence; vertical far-field pattern;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20062221

Filename

1706032