• DocumentCode
    780119
  • Title

    p-type conduction above room temperature in nitrogen-doped ZnO thin film grown by plasma-assisted pulsed laser deposition

  • Author

    Chakrabarti, Subit ; Doggett, B. ; O´Haire, R. ; McGlynn, Enda ; Henry, M.O. ; Meaney, A. ; Mosnier, J.-P.

  • Author_Institution
    Nat. Centre for Plasma Sci. & Technol., Dublin City Univ.
  • Volume
    42
  • Issue
    20
  • fYear
    2006
  • fDate
    9/28/2006 12:00:00 AM
  • Firstpage
    1181
  • Lastpage
    1182
  • Abstract
    Nitrogen-doped ZnO thin films were deposited using the pulsed laser deposition technique. The epitaxial ZnO films were p-type in the measured temperature range 200-450 K, with hole concentrations and mobilities of 9.6times1015 cm-3 and 10.8 cm2/V-s, respectively, at room temperature. The films remained p-type under conditions of changing illumination. This result represents a step towards realisation of ZnO-based optoelectronic devices for high-temperature operation
  • Keywords
    II-VI semiconductors; hole density; hole mobility; nitrogen; plasma deposition; pulsed laser deposition; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; zinc compounds; 200 to 450 K; ZnO:N; epitaxial thin films; hole concentrations; hole mobilities; optoelectronic devices; p-type conduction; plasma-assisted pulsed laser deposition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20062161
  • Filename
    1706047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=780119