Title :
1.5 μm GaInNAs semiconductor saturable absorber for passively modelocked solid-state lasers
Author :
Rutz, A. ; Grange, R. ; Liverini, V. ; Haiml, M. ; Schön, S. ; Keller, U.
Author_Institution :
Dept. of Phys., Eidgenossische Tech. Hochschule Zurich, Switzerland
fDate :
3/17/2005 12:00:00 AM
Abstract :
Fully self-starting and passively modelocking of a 1.5 μm solid-state laser with a GaInNAs semiconductor saturable absorber mirror (SESAM) has been demonstrated for the first time. A saturation fluence of 20 μJ/cm2, a modulation depth of 0.39% and a fast temporal decay of 18 ps were measured. These well-suited nonlinear optical SESAM parameters allowed for self-starting and passive modelocking of a diode-pumped Er:Yb:glass laser at 1.534 μm with a pulse duration of 5 ps at 61 MHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; mirrors; optical pumping; optical saturable absorption; quantum well devices; solid lasers; 1.5 micron; 1.534 micron; 18 ps; GaInNAs; GaInNAs semiconductor saturable absorber; diode-pumped Er:Yb:glass laser; fast temporal decay; fully self-starting laser; modulation depth; passive modelocking; passively modelocked solid-state lasers; pulse duration; saturation fluence; well-suited nonlinear optical SESAM parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20058272
