• DocumentCode
    780350
  • Title

    Improved-performance, InGaAs/InGaAsP (λ=980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping

  • Author

    Lee, J.J. ; Mawst, L.J. ; Botez, D.

  • Author_Institution
    Reed Center for Photonics, Univ. of Wisconsin-Madison, WI, USA
  • Volume
    39
  • Issue
    17
  • fYear
    2003
  • Firstpage
    1250
  • Lastpage
    1252
  • Abstract
    Doping the waveguide core (p=2×1017 cm-1) in asymmetric-waveguide InGaAs/InGaAsP, two-quantum-well diode lasers (λ=980 nm) raises the injection efficiency to 90% and decreases the threshold-current density, Jth. For 2 mm long, 100 μm wide stripe, uncoated chips Jth decreases from ∼188 A/cm2 to ∼150 A/cm2. High characteristic temperatures for Jth and the slope efficiency are obtained: T0=215K and T1=600K.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; waveguide lasers; 90 percent; 980 nm; InGaAs-InGaAsP; InGaAs/InGaAsP asymmetric broad-waveguide quantum-well diode laser; characteristic temperature; injection efficiency; slope efficiency; threshold current density; waveguide-core doping;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030830
  • Filename
    1231306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=780350