• DocumentCode
    780360
  • Title

    InAs/AlSb quantum cascade lasers operating at 6.7 μm

  • Author

    Teissier, R. ; Barate, D. ; Vicet, A. ; Yarekha, D.A. ; Alibert, C. ; Baranov, A.N. ; Marcadet, X. ; Garcia, M. ; Sirtori, C.

  • Author_Institution
    Univ. of Montpellier, France
  • Volume
    39
  • Issue
    17
  • fYear
    2003
  • Firstpage
    1252
  • Lastpage
    1254
  • Abstract
    Quantum cascade lasers based on the InAs/AlSb material system have been realised. The optical confinement is obtained using a plasmon waveguide with n+-InAs cladding layers. In pulse mode the lasers emit close to 6.7 μm with a threshold current density of 5 kA/cm2 at 90 K. The maximum operating temperature is 220 K.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; indium compounds; laser transitions; quantum cascade lasers; 6.7 micron; 90 to 220 K; InAs-AlSb; InAs/AlSb quantum cascade lasers; n+-InAs cladding layers; optical confinement; plasmon waveguide; pulse mode; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030780
  • Filename
    1231307
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=780360