Title :
InAs/AlSb quantum cascade lasers operating at 6.7 μm
Author :
Teissier, R. ; Barate, D. ; Vicet, A. ; Yarekha, D.A. ; Alibert, C. ; Baranov, A.N. ; Marcadet, X. ; Garcia, M. ; Sirtori, C.
Author_Institution :
Univ. of Montpellier, France
Abstract :
Quantum cascade lasers based on the InAs/AlSb material system have been realised. The optical confinement is obtained using a plasmon waveguide with n+-InAs cladding layers. In pulse mode the lasers emit close to 6.7 μm with a threshold current density of 5 kA/cm2 at 90 K. The maximum operating temperature is 220 K.
Keywords :
III-V semiconductors; aluminium compounds; current density; indium compounds; laser transitions; quantum cascade lasers; 6.7 micron; 90 to 220 K; InAs-AlSb; InAs/AlSb quantum cascade lasers; n+-InAs cladding layers; optical confinement; plasmon waveguide; pulse mode; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030780
