Improved Push–Pull Polarization Modulation Using Coupled Quantum-Well Structures

Author

Ristic, Sasa ; Jaeger, Nicolas A F

Author_Institution

Dept. of Electr. & Comput. Eng., British Columbia Univ.

Volume

19

Issue

10

fYear

2007

fDate

5/15/2007 12:00:00 AM

Firstpage

750

Lastpage

752

Abstract

Recently, we proposed a push-pull polarization-modulation scheme based on multiple repetitions of two InGaAlAs-InAlAs coupled quantum-well (CQW) structures. Additional numerical simulations showed one of the two CQW structures to be quite sensitive to layer thickness and compositional variations. Consequently, it would be challenging to reliably grow polarization modulators using this structure. Here, using the effective-mass envelope-function approximation, we design a more robust CQW structure to replace the sensitive one, and we also make improvements to the less sensitive of the two original structures

Keywords

III-V semiconductors; aluminium compounds; effective mass; gallium arsenide; gallium compounds; indium compounds; integrated optics; light polarisation; optical modulation; quantum well devices; InGaAlAs-InAlAs; InGaAlAs-InAlAs quantum-well; coupled quantum-well structures; effective-mass approximation; envelope-function approximation; polarization modulators; push-pull polarization modulation; Excitons; Optical polarization; Optical refraction; Optical sensors; Optical waveguides; Quantum well devices; Quantum wells; Refractive index; Robustness; Wave functions; Coupled quantum wells (CQWs); InGaAlAs; electrorefraction; polarization modulation; quantum-well modulator; strain-compensated layers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.895433

Filename

4156236