• DocumentCode
    780494
  • Title

    Full C-band tunable high fibre output power electroabsorption modulator integrated with semiconductor optical amplifier

  • Author

    Choi, W. ; Frateschi, N. ; Zhang, J. ; Gebretsadik, H. ; Jambunathan, R. ; Bond, A.E. ; Van Norman, J. ; Vandegrift, D. ; Wanamaker, C.

  • Author_Institution
    T-Networks Inc., Allentown, PA, USA
  • Volume
    39
  • Issue
    17
  • fYear
    2003
  • Firstpage
    1271
  • Lastpage
    1272
  • Abstract
    The 10 Gbit/s high power output InGaAsP multiple-quantum well electroabsorption modulator, which can be tunable in the full C-band, is demonstrated. The semiconductor optical amplifier is integrated to compensate for optical losses. Operation over the full C-band, which ranges from 1530 to 1565 nm, is obtained using temperature and bias tuning. Under these operating conditions, modulated fibre output power as high as +4 dBm, dynamic extinction ratio exceeding 8.5 dB, and dispersion penalty of less than 2 dB for 1600 ps/nm of fibre, are achieved across the entire band.
  • Keywords
    electro-optical modulation; electroabsorption; semiconductor optical amplifiers; 10 Gbit/s; 1530 to 1565 nm; C-band; InGaAsP; bias tuning; dispersion penalty; dynamic extinction ratio; electroabsorption modulator; fibre output power; optical losses; semiconductor optical amplifier; temperature tuning;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030801
  • Filename
    1231319