DocumentCode
780579
Title
Carbon-Doped Polysilicon Floating Gate for Improved Data Retention and P/E Window of Flash Memory
Author
Pu, Jing ; Kim, Sun-Jung ; Lee, Seung-Hwan ; Kim, Young-Sun ; Kim, Sung-Tae ; Choi, Kyu-Jin ; Cho, Byung Jin
Author_Institution
Silicon Nano Device Lab., Nat. Univ. of Singapore, Singapore
Volume
29
Issue
7
fYear
2008
fDate
7/1/2008 12:00:00 AM
Firstpage
688
Lastpage
690
Abstract
We propose a novel approach to engineering floating gates (FGs) of flash memory cells, namely, carbon incorporation into polysilicon FGs. This technique demonstrated an improvement in retention and a larger program/erase Vt window, particularly for smaller capacitance coupling ratio cells, which is important for future scaled flash memory cells.
Keywords
carbon; elemental semiconductors; flash memories; silicon; P/E window; Si:C; capacitance coupling ratio cells; carbon-doped polysilicon floating gate; flash memory cells; program/erase Vt window; Annealing; Conductivity; Data engineering; Electrons; Flash memory; Flash memory cells; Laboratories; Nonvolatile memory; Silicon carbide; Tunneling; Flash memory; floating gate (FG); retention; silicon carbide (SiC-3C);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2008.2000600
Filename
4558077
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